Wolfspeed, Inc. C3M0015065D
MPNC3M0015065D
Active
SICFET N-CH 650V 120A TO247-3
$45.82Ref. price · indicative, final on quote
PackagingTO-247-3
RoHSRoHS Compliant
SeriesC3M™
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Series | C3M™ |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 650 V |
| Drive voltage (Max rds on, min rds on) | 15V |
| Current - continuous drain (Id) @ 25°C | 120A (Tc) |
| Power dissipation | 416W (Tc) |
| Operating temperature | -40°C ~ 175°C (TJ) |
| Package | Tube |
| Vgs | +15V, -4V |
| Technology | SiCFET (Silicon Carbide) |
| Case | TO-247-3 |
| Vgs(th) (Max) @ id | 3.6V @ 15.5mA |
| Rds on (Max) @ id, vgs | 21mOhm @ 55.8A, 15V |
| Gate charge (Qg) (Max) @ vgs | 188 nC @ 15 V |
| Input capacitance (Ciss) (Max) @ vds | 5011 pF @ 400 V |