
WeEn Semiconductors WNSC6D20650WQ
MPNWNSC6D20650WQ
Active
DIODE SIL CARB 650V 20A TO247-2
$6.62Ref. price · indicative, final on quote
PackagingTO-247-2
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Diode type | Silicon Carbide Schottky |
| Mounting | Through Hole |
| Voltage - DC reverse (Vr) | 650 V |
| Voltage - forward (Vf) (Max) @ if | 1.4 V @ 20 A |
| Current - reverse leakage @ vr | 100 µA @ 650 V |
| Current - average rectified | 20A |
| Operating temperature - junction | 175°C |
| Speed | No Recovery Time > 500mA (Io) |
| Package | Tube |
| Case | TO-247-2 |
| Capacitance @ vr, | 1.2nF @ 1V, 1MHz |
| Reverse recovery time | 0 ns |