WNSC6D20650CW6Q
WeEn Semiconductors
DUAL SILICON CARBIDE SCHOTTKY DI
[IN STOCK] In Stock: 2 pcs
MOQ 1 · Tube · RoHS · EIA-481 · DAP/DDP · T/T
Technical specifications
| Parameter / Attribute | Specification / Value |
|---|---|
| Diode type | Silicon Carbide Schottky |
| Mounting | Through Hole |
| Voltage - DC reverse (Vr) | 650 V |
| Voltage - forward (Vf) (Max) @ if | 1.45 V @ 10 A |
| Current - reverse leakage @ vr | 50 µA @ 650 V |
| Current - average rectified (Io) (per diode) | 20A |
| Operating temperature - junction | 175°C |
| Speed | No Recovery Time > 500mA (Io) |
| Package | Tube |
| Case | TO-247-3 |
| Diode configuration | 1 Pair Common Cathode |
| Reverse recovery time | 0 ns |
WNSC6D20650CW6Q
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