WeEn Semiconductors WNSC6D01650MBJ
MPNWNSC6D01650MBJ
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DIODE SIL CARBIDE 650V 1A SMB
$1.67Ref. price · indicative, final on quote
PackagingDO-214AA, SMB
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Diode type | Silicon Carbide Schottky |
| Mounting | Surface Mount |
| Voltage - DC reverse (Vr) | 650 V |
| Voltage - forward (Vf) (Max) @ if | 1.4 V @ 1 A |
| Current - reverse leakage @ vr | 20 µA @ 650 V |
| Current - average rectified | 1A |
| Operating temperature - junction | 175°C |
| Speed | No Recovery Time > 500mA (Io) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Case | DO-214AA, SMB |
| Capacitance @ vr, | 130pF @ 1V, 1MHz |
| Reverse recovery time | 0 ns |