WeEn Semiconductors WNSC2D201200CWQ
MPNWNSC2D201200CWQ
Active
SILICON CARBIDE SCHOTTKY DIODE
$9.24Ref. price · indicative, final on quote
PackagingTO-247-3
RoHSRoHS Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Diode type | Silicon Carbide Schottky |
| Mounting | Through Hole |
| Voltage - DC reverse (Vr) | 1200 V |
| Voltage - forward (Vf) (Max) @ if | 1.65 V @ 10 A |
| Current - reverse leakage @ vr | 110 µA @ 1200 V |
| Current - average rectified (Io) (per diode) | 20A |
| Operating temperature - junction | 175°C |
| Speed | No Recovery Time > 500mA (Io) |
| Package | Tube |
| Case | TO-247-3 |
| Diode configuration | 1 Pair Common Cathode |
| Reverse recovery time | 0 ns |