WeEn Semiconductors WNSC08650T6J
MPNWNSC08650T6J
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DIODE SIL CARBIDE 650V 8A 5DFN
$3.12Ref. price · indicative, final on quote
Packaging4-VSFN Exposed Pad
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Diode type | Silicon Carbide Schottky |
| Mounting | Surface Mount |
| Voltage - DC reverse (Vr) | 650 V |
| Voltage - forward (Vf) (Max) @ if | 1.7 V @ 8 A |
| Current - reverse leakage @ vr | 50 µA @ 650 V |
| Current - average rectified | 8A |
| Operating temperature - junction | 175°C (Max) |
| Speed | No Recovery Time > 500mA (Io) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Case | 4-VSFN Exposed Pad |
| Capacitance @ vr, | 267pF @ 1V, 1MHz |
| Reverse recovery time | 0 ns |