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WeEn Semiconductors WND10P08YQ

WeEn Semiconductors WND10P08YQ

MPNWND10P08YQ
Active

DIODE GP 800V 10A IITO220-2

$0.95Ref. price · indicative, final on quote
PackagingTO-220-2
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

WND10P08YQ specifications
ParameterValue
Diode typeStandard
MountingThrough Hole
Voltage - DC reverse (Vr)800 V
Voltage - forward (Vf) (Max) @ if1.3 V @ 10 A
Current - reverse leakage @ vr10 µA @ 800 V
Current - average rectified10A
Operating temperature - junction150°C
SpeedStandard Recovery >500ns, > 200mA (Io)
PackageTube
CaseTO-220-2