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WeEn Semiconductors NXPSC206506Q

WeEn Semiconductors NXPSC206506Q

MPNNXPSC206506Q
Active

DIODE SIL CARB 650V 20A TO220AC

$7.55Ref. price · indicative, final on quote
PackagingTO-220-2
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

NXPSC206506Q specifications
ParameterValue
Diode typeSilicon Carbide Schottky
MountingThrough Hole
Voltage - DC reverse (Vr)650 V
Voltage - forward (Vf) (Max) @ if1.7 V @ 20 A
Current - reverse leakage @ vr500 µA @ 650 V
Current - average rectified20A
Operating temperature - junction175°C (Max)
SpeedNo Recovery Time > 500mA (Io)
PackageTube
CaseTO-220-2
Capacitance @ vr,600pF @ 1V, 1MHz
Reverse recovery time0 ns