NXPSC10650X6Q
WeEn Semiconductors
DIODE SIL CARB 650V 10A TO220F
[IN STOCK] In Stock: 1 pcs
MOQ 1 · Bulk · RoHS · EIA-481 · DAP/DDP · T/T
Technical specifications
| Parameter / Attribute | Specification / Value |
|---|---|
| Diode type | Silicon Carbide Schottky |
| Mounting | Through Hole |
| Voltage - DC reverse (Vr) | 650 V |
| Voltage - forward (Vf) (Max) @ if | 1.7 V @ 10 A |
| Current - reverse leakage @ vr | 250 µA @ 650 V |
| Current - average rectified | 10A |
| Operating temperature - junction | 175°C (Max) |
| Speed | No Recovery Time > 500mA (Io) |
| Package | Bulk |
| Case | TO-220-2 Full Pack, Isolated Tab |
| Capacitance @ vr, | 300pF @ 1V, 1MHz |
| Reverse recovery time | 0 ns |
NXPSC10650X6Q
[ALLOC] verified