BYV415W-600PQ
WeEn Semiconductors BYV415W-600PQ
MPNBYV415W-600PQ
Active
$1.5448Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Diode type | Standard |
| Mounting | Through Hole |
| Voltage - DC reverse (Vr) | 600 V |
| Voltage - forward (Vf) (Max) @ if | 2.1 V @ 15 A |
| Current - reverse leakage @ vr | 10 µA @ 600 V |
| Current - average rectified (Io) (per diode) | 15A |
| Operating temperature - junction | -65°C~175°C |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Package | Tube |
| Case | TO-247-3 |
| Diode configuration | 1 Pair Common Cathode |
| Reverse recovery time | 45 ns |