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WeEn Semiconductors BYV415K-600PQ — Discrete Semiconductors

WeEn Semiconductors BYV415K-600PQ

MPNBYV415K-600PQ
Active
$2.5100Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

BYV415K-600PQ specifications
ParameterValue
Diode typeStandard
MountingThrough Hole
Voltage - DC reverse (Vr)600 V
Voltage - forward (Vf) (Max) @ if2.1 V @ 15 A
Current - reverse leakage @ vr10 µA @ 600 V
Current - average rectified (Io) (per diode)15A
Operating temperature - junction-65°C~175°C
SpeedFast Recovery =< 500ns, > 200mA (Io)
PackageTube
CaseTO-3P-3, SC-65-3
Diode configuration1 Pair Common Cathode
Reverse recovery time45 ns