Skip to main content
WeEn Semiconductors BYV410X-600,127 — Discrete Semiconductors

WeEn Semiconductors BYV410X-600,127

MPNBYV410X-600,127
Active
$1.7400Ref. price · indicative, final on quote
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

BYV410X-600,127 specifications
ParameterValue
Diode typeStandard
MountingThrough Hole
Voltage - DC reverse (Vr)600 V
Voltage - forward (Vf) (Max) @ if2.1 V @ 10 A
Current - reverse leakage @ vr50 µA @ 600 V
Current - average rectified (Io) (per diode)10A
Operating temperature - junction150°C(Max)
SpeedFast Recovery =< 500ns, > 200mA (Io)
PackageTube
CaseTO-220-3 Full Pack, Isolated Tab
Diode configuration1 Pair Common Cathode
Reverse recovery time35 ns