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WeEn Semiconductors BYV410X-600PQ — Discrete Semiconductors

WeEn Semiconductors BYV410X-600PQ

MPNBYV410X-600PQ
Active

DIODE ARRAY GP 600V 20A TO220F

$1.2800Ref. price · indicative, final on quote
PackagingTO-220-3 Full Pack, Isolated Tab
RoHSRoHS Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

BYV410X-600PQ specifications
ParameterValue
MountingThrough Hole
Voltage - DC reverse (Vr)600 V
Voltage - forward (Vf) (Max) @ if1.75 V @ 16 A
Current - reverse leakage @ vr10 µA @ 600 V
Current - average rectified (Io) (per diode)20A
Operating temperature - junction175°C (Max)
SpeedFast Recovery =< 500ns, > 200mA (Io)
PackageTube
TechnologyStandard
CaseTO-220-3 Full Pack, Isolated Tab
Diode configuration1 Pair Common Cathode
Reverse recovery time55 ns