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WeEn Semiconductors BYV29F-600,127 — Discrete Semiconductors

WeEn Semiconductors BYV29F-600,127

MPNBYV29F-600,127
Active

DIODE GEN PURP 600V 9A TO220AC

$0.3700Ref. price · indicative, final on quote
PackagingTO-220-2
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

BYV29F-600,127 specifications
ParameterValue
Diode typeStandard
MountingThrough Hole
Voltage - DC reverse (Vr)600 V
Voltage - forward (Vf) (Max) @ if1.9 V @ 8 A
Current - reverse leakage @ vr50 µA @ 600 V
Current - average rectified9A
Operating temperature - junction150°C(Max)
SpeedFast Recovery =< 500ns, > 200mA (Io)
PackageTube
CaseTO-220-2
Reverse recovery time35 ns