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WeEn Semiconductors BYV29D-600PJ — Discrete Semiconductors

WeEn Semiconductors BYV29D-600PJ

MPNBYV29D-600PJ
Active

DIODE GEN PURP 600V 9A DPAK

$0.6400Ref. price · indicative, final on quote
PackagingTO-252-3, DPak (2 Leads + Tab), SC-63
RoHSRoHS Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

BYV29D-600PJ specifications
ParameterValue
Diode typeStandard
MountingSurface Mount
Voltage - DC reverse (Vr)600 V
Voltage - forward (Vf) (Max) @ if1.3 V @ 8 A
Current - reverse leakage @ vr10 µA @ 600 V
Current - average rectified9A
Operating temperature - junction175°C(Max)
SpeedFast Recovery =< 500ns, > 200mA (Io)
PackageTape & Reel (TR); Cut Tape (CT)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Reverse recovery time75 ns