BYV10EX-600PQ
WeEn Semiconductors
DIODE GEN PURP 600V 10A TO220FP
BYV10EX-600PQ
[IN STOCK] In Stock: 1,880 pcs
MOQ 1 · Tube · RoHS · EIA-481 · DAP/DDP · T/T
Technical specifications
| Parameter / Attribute | Specification / Value |
|---|---|
| Diode type | Standard |
| Mounting | Through Hole |
| Voltage - DC reverse (Vr) | 600 V |
| Voltage - forward (Vf) (Max) @ if | 2 V @ 10 A |
| Current - reverse leakage @ vr | 10 µA @ 600 V |
| Current - average rectified | 10A |
| Operating temperature - junction | -65°C~175°C |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Package | Tube |
| Case | TO-220-2 Full Pack, Isolated Tab |
| Reverse recovery time | 50 ns |
BYV10EX-600PQ
[ALLOC] verified