WeEn Semiconductors BYV10-600PQ
MPNBYV10-600PQ
Active
DIODE GEN PURP 600V 10A TO220AC
$0.7400Ref. price · indicative, final on quote
PackagingTO-220-2
RoHSRoHS Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Diode type | Standard |
| Mounting | Through Hole |
| Voltage - DC reverse (Vr) | 600 V |
| Voltage - forward (Vf) (Max) @ if | 2 V @ 10 A |
| Current - reverse leakage @ vr | 10 µA @ 600 V |
| Current - average rectified | 10A |
| Operating temperature - junction | 175°C(Max) |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Package | Tube |
| Case | TO-220-2 |
| Reverse recovery time | 50 ns |