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BYC30WT-600PQ

WeEn Semiconductors BYC30WT-600PQ

MPNBYC30WT-600PQ
Active

DIODE GEN PURP 600V 30A TO247-3

$2.51Ref. price · indicative, final on quote
PackagingTO-247-3
RoHSRoHS Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

BYC30WT-600PQ specifications
ParameterValue
Diode typeStandard
MountingThrough Hole
Voltage - DC reverse (Vr)600 V
Voltage - forward (Vf) (Max) @ if2.75 V @ 30 A
Current - reverse leakage @ vr10 µA @ 600 V
Current - average rectified30A
Operating temperature - junction175°C (Max)
SpeedFast Recovery =< 500ns, > 200mA (Io)
PackageTube
CaseTO-247-3
Reverse recovery time22 ns