WeEn Semiconductors BYC30JT-600PSQ
MPNBYC30JT-600PSQ
Active
DIODE GEN PURP 600V 30A TO3PF
$1.58Ref. price · indicative, final on quote
PackagingTO-3PFM, SC-93-3
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Mounting | Through Hole |
| Voltage - DC reverse (Vr) | 600 V |
| Voltage - forward (Vf) (Max) @ if | 2.75 V @ 30 A |
| Current - reverse leakage @ vr | 10 µA @ 600 V |
| Current - average rectified | 30A |
| Operating temperature - junction | 175°C |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Package | Tube |
| Technology | Standard |
| Case | TO-3PFM, SC-93-3 |
| Reverse recovery time | 22 ns |