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Vishay General Semiconductor - Diodes Division BYW29-100-E3/45 — Discrete Semiconductors

Vishay General Semiconductor - Diodes Division BYW29-100-E3/45

MPNBYW29-100-E3/45
Active

DIODE GEN PURP 100V 8A TO220AC

$1.1400Ref. price · indicative, final on quote
PackagingTO-220-2
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

BYW29-100-E3/45 Technical Specifications
ParameterValue
Diode typeStandard
Mounting typeThrough Hole
Voltage - DC reverse (Vr)100 V
Voltage - forward (Vf) (Max) @ if1.3 V @ 20 A
Current - reverse leakage @ vr10 µA @ 100 V
Current - average rectified8A
Operating temperature - junction-65°C~150°C
SpeedFast Recovery =< 500ns, > 200mA (Io)
PackageTube
CaseTO-220-2
Capacitance @ vr, f45pF @ 4V, 1MHz
Reverse recovery time25 ns