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Vishay General Semiconductor - Diodes Division BYVB32-200-E3/45 — Discrete Semiconductors

Vishay General Semiconductor - Diodes Division BYVB32-200-E3/45

MPNBYVB32-200-E3/45
Active

DIODE ARRAY GP 200V 18A TO263AB

$1.6900Ref. price · indicative, final on quote
PackagingTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

BYVB32-200-E3/45 Technical Specifications
ParameterValue
Diode typeStandard
Mounting typeSurface Mount
Voltage - DC reverse (Vr)200 V
Voltage - forward (Vf) (Max) @ if1.15 V @ 20 A
Current - reverse leakage @ vr10 µA @ 200 V
Current - average rectified (Io) (per diode)18A
Operating temperature - junction-65°C~150°C
SpeedFast Recovery =< 500ns, > 200mA (Io)
PackageTube
CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Diode configuration1 Pair Common Cathode
Reverse recovery time25 ns