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Vishay General Semiconductor - Diodes Division BAS16LTH-HG3-08 — Discrete Semiconductors

Vishay General Semiconductor - Diodes Division BAS16LTH-HG3-08

MPNBAS16LTH-HG3-08
Active

DIODE GP 100V 250MA DFN1006-2A

$0.2800Ref. price · indicative, final on quote
Packaging0402 (1006 Metric)
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

BAS16LTH-HG3-08 Technical Specifications
ParameterValue
SeriesAutomotive, AEC-Q101
Diode typeStandard
Mounting typeSurface Mount
Voltage - DC reverse (Vr)100 V
Voltage - forward (Vf) (Max) @ if1.25 V @ 150 mA
Current - reverse leakage @ vr1 µA @ 100 V
Current - average rectified250mA
Operating temperature - junction-55°C~175°C
SpeedFast Recovery =< 500ns, > 200mA (Io)
PackageTape & Reel (TR); Cut Tape (CT)
Case0402 (1006 Metric)
Capacitance @ vr, f0.36pF @ 0V, 1MHz
Reverse recovery time4 ns