BYV32-100-E3/45
Vishay General Semiconductor - Diodes Division
TubeFast Recovery =< 500ns, > 200mA (Io)Through Hole
Ref. price$1.7400
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Vishay General Semiconductor - Diodes Division BYV32 Series
9 variants · Vishay General Semiconductor - Diodes Division
About the Vishay General Semiconductor - Diodes Division BYV32 Series
The Vishay General Semiconductor - Diodes Division BYV32 Series series groups 9 related part numbers, each listed with full specifications, a datasheet where available, and an RFQ option. The listed variants share a common case of TO-220-3, current - average rectified (Io) (per diode) of 18A and diode configuration of 1 Pair Common Cathode. Variants differ by current - reverse leakage @ vr and voltage - DC reverse (Vr), so you can match the exact current - reverse leakage @ vr your application requires using the selection guide below.
Select a variant by
- Current - reverse leakage @ vr
- 10 µA @ 100 V · 10 µA @ 200 V
- Voltage - DC reverse (Vr)
- 100 V · 200 V
Shared specifications
- Case
- TO-220-3
- Current - average rectified (Io) (per diode)
- 18A
- Diode configuration
- 1 Pair Common Cathode
- Diode type
- Standard
- Mounting
- Through Hole
- Operating temperature - junction
- -65°C~150°C
- Package
- Tube
- Reverse recovery time
- 25 ns
- Speed
- Fast Recovery =< 500ns, > 200mA (Io)
- Voltage - forward (Vf) (Max) @ if
- 1.15 V @ 20 A
Variant comparison
| Parameter | BYV32-100-E3/45 | BYV32-200-E3/45 |
|---|---|---|
| Current - reverse leakage @ vr | 10 µA @ 100 V | 10 µA @ 200 V |
| Voltage - DC reverse (Vr) | 100 V | 200 V |
Request a quote on any Vishay General Semiconductor - Diodes Division BYV32 Series part number and we confirm price, availability and lead time per line — including end-of-life and allocation-constrained variants.