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Vishay General Semiconductor - Diodes Division S1M-E3/5AT — Discrete Semiconductors

Vishay General Semiconductor - Diodes Division S1M-E3/5AT

MPNS1M-E3/5AT
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DIODE GEN PURP 1KV 1A DO214AC

$0.3600Ref. price · indicative, final on quote
PackagingDO-214AC, SMA
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

S1M-E3/5AT Technical Specifications
ParameterValue
Mounting typeSurface Mount
Voltage - DC reverse (Vr)1000 V
Voltage - forward (Vf) (Max) @ if1.1 V @ 1 A
Current - reverse leakage @ vr5 µA @ 1000 V
Current - average rectified1A
Operating temperature - junction-55°C ~ 150°C
SpeedStandard Recovery >500ns, > 200mA (Io)
PackageTape & Reel (TR) Cut Tape (CT)
TechnologyStandard
CaseDO-214AC, SMA
Capacitance @ vr, f12pF @ 4V, 1MHz
Reverse recovery time1.8 µs