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Vishay General Semiconductor - Diodes Division MB6S-E3/80 — Discrete Semiconductors

Vishay General Semiconductor - Diodes Division MB6S-E3/80

MPNMB6S-E3/80
Active

BRIDGE RECT 1P 600V TO269AA

$0.5100Ref. price · indicative, final on quote
PackagingTO-269AA, 4-BESOP
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

MB6S-E3/80 specifications
ParameterValue
Diode typeSingle Phase
MountingSurface Mount
Voltage - peak reverse600 V
Voltage - forward (Vf) (Max) @ if1 V @ 400 mA
Current - reverse leakage @ vr5 µA @ 600 V
Current - average rectified500 mA
Operating temperature-55°C~150°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT)
TechnologyStandard
CaseTO-269AA, 4-BESOP