Skip to main content
Vishay General Semiconductor - Diodes Division MB6S-E3/80 — Discrete Semiconductors

Vishay General Semiconductor - Diodes Division MB6S-E3/80

MPNMB6S-E3/80
Active

BRIDGE RECT 1P 600V TO269AA

$0.5100Ref. price · indicative, final on quote
PackagingTO-269AA, 4-BESOP
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

MB6S-E3/80 Technical Specifications
ParameterValue
Diode typeSingle Phase
Mounting typeSurface Mount
Voltage - peak reverse600 V
Voltage - forward (Vf) (Max) @ if1 V @ 400 mA
Current - reverse leakage @ vr5 µA @ 600 V
Current - average rectified500 mA
Operating temperature-55°C~150°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT)
TechnologyStandard
CaseTO-269AA, 4-BESOP