BYV26E-TAP
Vishay General Semiconductor - Diodes Division
DIODE AVALANCHE 1KV 1A SOD57
[IN STOCK] In Stock: 1,566 pcs
MOQ 1 · Cut Tape (CT); Tape & Box (TB) · RoHS · EIA-481 · DAP/DDP · T/T
Technical specifications
| Parameter / Attribute | Specification / Value |
|---|---|
| Diode type | Avalanche |
| Mounting | Through Hole |
| Voltage - DC reverse (Vr) | 1000 V |
| Voltage - forward (Vf) (Max) @ if | 2.5 V @ 1 A |
| Current - reverse leakage @ vr | 5 µA @ 1000 V |
| Current - average rectified | 1A |
| Operating temperature - junction | -55°C~175°C |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Package | Cut Tape (CT); Tape & Box (TB) |
| Case | SOD-57, Axial |
| Reverse recovery time | 75 ns |
BYV26E-TAP
[ALLOC] verified