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Vishay General Semiconductor - Diodes Division BYV26D-TAP — Discrete Semiconductors

Vishay General Semiconductor - Diodes Division BYV26D-TAP

MPNBYV26D-TAP
Active

DIODE AVALANCHE 800V 1A SOD57

$0.6900Ref. price · indicative, final on quote
PackagingSOD-57, Axial
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

BYV26D-TAP Technical Specifications
ParameterValue
Diode typeAvalanche
Mounting typeThrough Hole
Voltage - DC reverse (Vr)800 V
Voltage - forward (Vf) (Max) @ if2.5 V @ 1 A
Current - reverse leakage @ vr5 µA @ 800 V
Current - average rectified1A
Operating temperature - junction-55°C~175°C
SpeedFast Recovery =< 500ns, > 200mA (Io)
PackageCut Tape (CT); Tape & Box (TB)
CaseSOD-57, Axial
Reverse recovery time75 ns