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Vishay General Semiconductor - Diodes Division BAV70-G3-18 — Discrete Semiconductors

Vishay General Semiconductor - Diodes Division BAV70-G3-18

MPNBAV70-G3-18
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$0.3200Ref. price · indicative, final on quote
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MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

BAV70-G3-18 Technical Specifications
ParameterValue
SeriesBAV70-G
Mounting typeSurface Mount
Voltage - DC reverse (Vr)70 V
Voltage - forward (Vf) (Max) @ if1.25 V @ 150 mA
Current - reverse leakage @ vr2.5 µA @ 70 V
Current - average rectified (Io) (per diode)250mA (DC)
Operating temperature - junction150°C (Max)
SpeedFast Recovery =< 500ns, > 200mA (Io)
PackageTape & Reel (TR) Cut Tape (CT)
TechnologyStandard
ManufacturerVishay General Semiconductor - Diodes Division
CaseTO-236-3, SC-59, SOT-23-3
Diode configuration1 Pair Common Cathode
Reverse recovery time6 ns