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Vishay General Semiconductor - Diodes Division BAV70-G3-18 — Discrete Semiconductors

Vishay General Semiconductor - Diodes Division BAV70-G3-18

MPNBAV70-G3-18
Active
$0.3200Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

BAV70-G3-18 specifications
ParameterValue
SeriesBAV70-G
MountingSurface Mount
Voltage - DC reverse (Vr)70 V
Voltage - forward (Vf) (Max) @ if1.25 V @ 150 mA
Current - reverse leakage @ vr2.5 µA @ 70 V
Current - average rectified (Io) (per diode)250mA (DC)
Operating temperature - junction150°C (Max)
SpeedFast Recovery =< 500ns, > 200mA (Io)
PackageTape & Reel (TR) Cut Tape (CT)
TechnologyStandard
ManufacturerVishay General Semiconductor - Diodes Division
CaseTO-236-3, SC-59, SOT-23-3
Diode configuration1 Pair Common Cathode
Reverse recovery time6 ns