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Vishay General Semiconductor - Diodes Division 1N914TAP — Discrete Semiconductors

Vishay General Semiconductor - Diodes Division 1N914TAP

MPN1N914TAP
Active

DIODE GEN PURP 100V 300MA DO35

$0.1200Ref. price · indicative, final on quote
PackagingDO-204AH, DO-35, Axial
RoHSROHS3 Compliant
SeriesAutomotive, AEC-Q101
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

1N914TAP specifications
ParameterValue
MountingThrough Hole
Voltage - DC reverse (Vr)100 V
Voltage - forward (Vf) (Max) @ if1 V @ 10 mA
Current - reverse leakage @ vr5 µA @ 75 V
Current - average rectified300mA
Operating temperature - junction-65°C ~ 175°C
GradeAutomotive
SpeedFast Recovery =< 500ns, > 200mA (Io)
PackageCut Tape (CT) Tape & Box (TB)
TechnologyStandard
QualificationAEC-Q101
CaseDO-204AH, DO-35, Axial
Capacitance @ vr,4pF @ 0V, 1MHz
Reverse recovery time4 ns