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Vishay General Semiconductor - Diodes Division 1N4448WS-HE3-18 — Discrete Semiconductors

Vishay General Semiconductor - Diodes Division 1N4448WS-HE3-18

MPN1N4448WS-HE3-18
Active
$0.0374Ref. price · indicative, final on quote
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

1N4448WS-HE3-18 Technical Specifications
ParameterValue
SeriesAutomotive, AEC-Q101
Diode typeStandard
Mounting typeSurface Mount
Voltage - DC reverse (Vr)75 V
Voltage - forward (Vf) (Max) @ if720 mV @ 5 mA
Current - reverse leakage @ vr5 µA @ 75 V
Current - average rectified150mA
Operating temperature - junction-55°C~150°C
SpeedSmall Signal =< 200mA (Io), Any Speed
PackageTape & Reel (TR)
CaseSC-76, SOD-323
Reverse recovery time4 ns