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Vishay General Semiconductor - Diodes Division 1N4448TAP — Discrete Semiconductors

Vishay General Semiconductor - Diodes Division 1N4448TAP

MPN1N4448TAP
Active

DIODE GEN PURP 75V 150MA DO35

$0.1500Ref. price · indicative, final on quote
PackagingDO-204AH, DO-35, Axial
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

1N4448TAP Technical Specifications
ParameterValue
Diode typeStandard
Mounting typeThrough Hole
Voltage - DC reverse (Vr)75 V
Voltage - forward (Vf) (Max) @ if720 mV @ 5 mA
Current - reverse leakage @ vr5 µA @ 75 V
Current - average rectified150mA
Operating temperature - junction175°C(Max)
SpeedSmall Signal =< 200mA (Io), Any Speed
PackageCut Tape (CT); Tape & Box (TB)
CaseDO-204AH, DO-35, Axial
Capacitance @ vr, f4pF @ 0V, 1MHz
Reverse recovery time8 ns