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Vishay General Semiconductor - Diodes Division 1N4448-A — Discrete Semiconductors

Vishay General Semiconductor - Diodes Division 1N4448-A

MPN1N4448-A
Obsolete
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

1N4448-A Technical Specifications
ParameterValue
Diode typeStandard
Mounting typeThrough Hole
Voltage - DC reverse (Vr)75 V
Voltage - forward (Vf) (Max) @ if1 V @ 10 mA
Current - reverse leakage @ vr5 µA @ 75 V
Current - average rectified500mA
Operating temperature - junction-65°C~175°C
SpeedSmall Signal =< 200mA (Io), Any Speed
PackageTape & Reel (TR)
CaseDO-204AH, DO-35, Axial
Capacitance @ vr, f4pF @ 0V, 1MHz
Reverse recovery time4 ns