UF3SC065007K4S
Technical Documents
PDF / CAD
RoHS Compliant · Lead-Free
EIA-481 Standard
UnitedSiC UF3SC065007K4S
MPN UF3SC065007K4S
Active
Spot Stock · 24-48h Dispatch
100% Original Sealed
MOSFET N-CH 650V 120A TO247-4
In Stock: 2,667 pcs
MOQ: 1 pcs
Logistics: DHL / FedEx DAP (Global Express · 3-7d)
Russia & CIS DDP (Door-to-Door Cleared)
Dispatch: Shenzhen / HK
Unit Price (USD)
$78.82 / pc
Direct Purchase Ready
Volume Pricing Breaks Confirmed upon quotation
1+ pcs
$78.82
10+ pcs
$70.94
30+ pcs
$64.63
100+ pcs
$58.33
500+ pcs
$54.39
1,000+ pcs
$51.23
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[SPEC] Essential Parameters Snapshot Full Specifications (15)
Package / Case TO-247-4
Output / Current 650 V
Full Technical Specifications
15 Parameters| Parameter / Attribute | Specification / Value |
|---|---|
| FET type | P-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 650 V |
| Drive voltage (Max rds on, min rds on) | 12V |
| Current - continuous drain (Id) @ 25°C | 120A (Tc) |
| Power dissipation | 789W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tube |
| Vgs | ±20V |
| Technology | SiCFET (Silicon Carbide) |
| Case | TO-247-4 |
| Vgs(th) (Max) @ id | 6V @ 10mA |
| Rds on (Max) @ id, vgs | 9mOhm @ 50A, 12V |
| Gate charge (Qg) (Max) @ vgs | 214 nC @ 15 V |
| Input capacitance (Ciss) (Max) @ vds | 8360 pF @ 100 V |
[DESK] Shenzhen Spot Allocation · 2h Response
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UF3SC065007K4S
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