UF3SC065007K4S
UnitedSiC UF3SC065007K4S
MPNUF3SC065007K4S
Active
MOSFET N-CH 650V 120A TO247-4
$78.82Ref. price · indicative, final on quote
PackagingTO-247-4
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| FET type | P-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 650 V |
| Drive voltage (Max rds on, min rds on) | 12V |
| Current - continuous drain (Id) @ 25°C | 120A (Tc) |
| Power dissipation | 789W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tube |
| Vgs | ±20V |
| Technology | SiCFET (Silicon Carbide) |
| Case | TO-247-4 |
| Vgs(th) (Max) @ id | 6V @ 10mA |
| Rds on (Max) @ id, vgs | 9mOhm @ 50A, 12V |
| Gate charge (Qg) (Max) @ vgs | 214 nC @ 15 V |
| Input capacitance (Ciss) (Max) @ vds | 8360 pF @ 100 V |