Toshiba Semiconductor TPH6 Series

3 variants · Toshiba Semiconductor

About the Toshiba Semiconductor TPH6 Series

The Toshiba Semiconductor TPH6 Series series groups 3 related part numbers, each listed with full specifications, a datasheet where available, and an RFQ option. The listed variants share a common case of 8-PowerVDFN, FET type of N-Channel and mounting of Surface Mount. Variants differ by current - continuous drain (Id) @ 25°C, drain to source voltage and drive voltage (Max rds on, min rds on), so you can match the exact current - continuous drain (Id) @ 25°C your application requires using the selection guide below.

Select a variant by

Current - continuous drain (Id) @ 25°C: 13A (Ta) · 87A (Ta), 49A (Tc)
Drain to source voltage: 40 V · 200 V
Drive voltage (Max rds on, min rds on): 4.5V, 10V · 10V
Gate charge (Qg) (Max) @ vgs: 11.2 nC @ 10 V · 30 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds: 1100 pF @ 100 V · 2700 pF @ 20 V
Operating temperature: 150°C (TJ) · 175°C
Power dissipation: 1.6W (Ta), 57W (Tc) · 1.8W (Ta), 81W (Tc)
Rds on (Max) @ id, vgs: 6mOhm @ 24.5A, 10V · 64mOhm @ 6.5A, 10V

Shared specifications

Case: 8-PowerVDFN
FET type: N-Channel
Mounting: Surface Mount
Package: Tape & Reel (TR); Cut Tape (CT)
Technology: MOSFET (Metal Oxide)
Vgs: ±20V

Variant comparison

Parameter	TPH6400ENH,L1Q	TPH6R004PL,LQ
Current - continuous drain (Id) @ 25°C	13A (Ta)	87A (Ta), 49A (Tc)
Drain to source voltage	200 V	40 V
Drive voltage (Max rds on, min rds on)	10V	4.5V, 10V
Gate charge (Qg) (Max) @ vgs	11.2 nC @ 10 V	30 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds	1100 pF @ 100 V	2700 pF @ 20 V
Operating temperature	150°C (TJ)	175°C
Power dissipation	1.6W (Ta), 57W (Tc)	1.8W (Ta), 81W (Tc)
Rds on (Max) @ id, vgs	64mOhm @ 6.5A, 10V	6mOhm @ 24.5A, 10V

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