TK28V65W,LQ
Toshiba Semiconductor
Tape & Reel (TR); Cut Tape (CT)N-ChannelMOSFET (Metal Oxide)
Ref. price$5.26
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Toshiba Semiconductor TK28 Series
2 variants · Toshiba Semiconductor
About the Toshiba Semiconductor TK28 Series
The Toshiba Semiconductor TK28 Series series groups 2 related part numbers, each listed with full specifications, a datasheet where available, and an RFQ option. The listed variants share a common case of 4-VSFN Exposed Pad, current - continuous drain (Id) @ 25°C of 27.6A (Ta) and drain to source voltage of 650 V.
Shared specifications
- Case
- 4-VSFN Exposed Pad
- Current - continuous drain (Id) @ 25°C
- 27.6A (Ta)
- Drain to source voltage
- 650 V
- Drive voltage (Max rds on, min rds on)
- 10V
- FET type
- N-Channel
- Gate charge (Qg) (Max) @ vgs
- 75 nC @ 10 V
- Input capacitance (Ciss) (Max) @ vds
- 3000 pF @ 300 V
- Mounting
- Surface Mount
- Operating temperature
- 150°C
- Package
- Tape & Reel (TR); Cut Tape (CT)
- Power dissipation
- 240W (Tc)
- Rds on (Max) @ id, vgs
- 120mOhm @ 13.8A, 10V
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