TK22A65X5,S5X
Toshiba Semiconductor
TubeN-ChannelMOSFET (Metal Oxide)
Ref. price$4.12
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Toshiba Semiconductor TK22 Series
2 variants · Toshiba Semiconductor
About the Toshiba Semiconductor TK22 Series
The Toshiba Semiconductor TK22 Series series groups 2 related part numbers, each listed with full specifications, a datasheet where available, and an RFQ option. The listed variants share a common case of TO-220-3 Full Pack, current - continuous drain (Id) @ 25°C of 22A (Ta) and drain to source voltage of 650 V.
Shared specifications
- Case
- TO-220-3 Full Pack
- Current - continuous drain (Id) @ 25°C
- 22A (Ta)
- Drain to source voltage
- 650 V
- Drive voltage (Max rds on, min rds on)
- 10V
- FET type
- N-Channel
- Gate charge (Qg) (Max) @ vgs
- 50 nC @ 10 V
- Input capacitance (Ciss) (Max) @ vds
- 2400 pF @ 300 V
- Mounting
- Through Hole
- Operating temperature
- 150°C
- Package
- Tube
- Power dissipation
- 45W (Tc)
- Rds on (Max) @ id, vgs
- 160mOhm @ 11A, 10V
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