Toshiba Semiconductor TK17 Series

2 variants · Toshiba Semiconductor

About the Toshiba Semiconductor TK17 Series

The Toshiba Semiconductor TK17 Series series groups 2 related part numbers, each listed with full specifications, a datasheet where available, and an RFQ option. Every variant in the range shares a common case of 4-VSFN Exposed Pad, drain to source voltage of 650 V and drive voltage (Max rds on, min rds on) of 10V. Variants differ by current - continuous drain (Id) @ 25°C, gate charge (Qg) (Max) @ vgs and input capacitance (Ciss) (Max) @ vds, so you can match the exact current - continuous drain (Id) @ 25°C your application requires using the selection guide below. All listed Toshiba Semiconductor TK17 Series part numbers are active and orderable.

Select a variant by

Current - continuous drain (Id) @ 25°C: 17.3A (Ta) · 18A (Ta)
Gate charge (Qg) (Max) @ vgs: 29 nC @ 10 V · 45 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds: 1635 pF @ 300 V · 1800 pF @ 300 V
Power dissipation: 150W (Tc) · 156W (Tc)
Rds on (Max) @ id, vgs: 170mOhm @ 9A, 10V · 210mOhm @ 8.7A, 10V
Vgs(th) (Max) @ id: 3.5V @ 900µA · 4V @ 730µA

Shared specifications

Case: 4-VSFN Exposed Pad
Drain to source voltage: 650 V
Drive voltage (Max rds on, min rds on): 10V
FET type: N-Channel
Mounting: Surface Mount
Operating temperature: 150°C
Package: Tape & Reel (TR); Cut Tape (CT)
Technology: MOSFET (Metal Oxide)
Vgs: ±30V

Variant comparison

Parameter	TK170V65Z,LQ	TK17V65W,LQ
Current - continuous drain (Id) @ 25°C	18A (Ta)	17.3A (Ta)
Gate charge (Qg) (Max) @ vgs	29 nC @ 10 V	45 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds	1635 pF @ 300 V	1800 pF @ 300 V
Power dissipation	150W (Tc)	156W (Tc)
Rds on (Max) @ id, vgs	170mOhm @ 9A, 10V	210mOhm @ 8.7A, 10V
Vgs(th) (Max) @ id	4V @ 730µA	3.5V @ 900µA

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