Skip to main content

Toshiba Semiconductor RN23 Discrete Semiconductors Series

3 variants · Toshiba Semiconductor

About the Toshiba Semiconductor RN23 Discrete Semiconductors Series

The Toshiba Semiconductor RN23 Discrete Semiconductors Series series groups 3 related part numbers, each listed with full specifications, a datasheet where available, and an RFQ option. The listed variants share a common case of SC-70, SOT-323, current - collector (Ic) of 100 mA and current - collector cutoff of 500nA. Variants differ by DC current gain (hFE) (Min) @ ic, vce, resistor - base (R1) and resistor - emitter base (R2), so you can match the exact DC current gain (hFE) (Min) @ ic, vce your application requires using the selection guide below.

Select a variant by

DC current gain (hFE) (Min) @ ic, vce
70 @ 10mA, 5V · 80 @ 10mA, 5V
Resistor - base (R1)
22 kOhms · 47 kOhms
Resistor - emitter base (R2)
22 kOhms · 47 kOhms

Shared specifications

Case
SC-70, SOT-323
Current - collector (Ic)
100 mA
Current - collector cutoff
500nA
FET type
PNP - Pre-Biased
Frequency
200 MHz
Mounting
Surface Mount
Package
Tape & Reel (TR); Cut Tape (CT)
Power - max
100 mW
Vce saturation (Max) @ ib, ic
300mV @ 250µA, 5mA
Voltage - collector emitter breakdown
50 V

Variant comparison

ParameterRN2303,LXHFRN2304,LXHF
DC current gain (hFE) (Min) @ ic, vce70 @ 10mA, 5V80 @ 10mA, 5V
Resistor - base (R1)22 kOhms47 kOhms
Resistor - emitter base (R2)22 kOhms47 kOhms

Request a quote on any Toshiba Semiconductor RN23 Discrete Semiconductors Series part number and we confirm price, availability and lead time per line — including end-of-life and allocation-constrained variants.

All variants