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Toshiba Semiconductor RN1908(T5L,F,T) — Memory (DRAM / SRAM / Flash / EEPROM)

Toshiba Semiconductor RN1908(T5L,F,T)

MPNRN1908(T5L,F,T)
End of Life

TRANS 2NPN PREBIAS 0.2W US6

$0.35Ref. price · indicative, final on quote
Packaging6-TSSOP, SC-88, SOT-363
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

RN1908(T5L,F,T) Technical Specifications
ParameterValue
Mounting typeSurface Mount
FET type2 NPN - Pre-Biased (Dual)
Voltage - collector emitter breakdown50V
Current - collector (Ic)100mA
Current - collector cutoff100nA (ICBO)
DC current gain (hFE) (Min) @ ic, vce80 @ 10mA, 5V
Power - max200mW
Frequency250MHz
PackageTape & Reel (TR); Cut Tape (CT)
Case6-TSSOP, SC-88, SOT-363
Resistor - base (R1)22kOhms
Resistor - emitter base (R2)47kOhms
Vce saturation (Max) @ ib, ic300mV @ 250µA, 5mA