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Toshiba Semiconductor RN1709JE(TE85L,F) — Memory (DRAM / SRAM / Flash / EEPROM)

Toshiba Semiconductor RN1709JE(TE85L,F)

MPNRN1709JE(TE85L,F)
End of Life

NPN X 2 BRT Q1BSR=47KOHM Q1BER=2

$0.41Ref. price · indicative, final on quote
PackagingSOT-553
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

RN1709JE(TE85L,F) Technical Specifications
ParameterValue
Mounting typeSurface Mount
FET type2 NPN - Pre-Biased (Dual) (Emitter Coupled)
Voltage - collector emitter breakdown50V
Current - collector (Ic)100mA
Current - collector cutoff500nA
DC current gain (hFE) (Min) @ ic, vce70 @ 10mA, 5V
Power - max100mW
Frequency250MHz
PackageTape & Reel (TR); Cut Tape (CT)
CaseSOT-553
Resistor - base (R1)47kOhms
Resistor - emitter base (R2)22kOhms
Vce saturation (Max) @ ib, ic300mV @ 250µA, 5mA