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Toshiba Semiconductor HN1B04FE-GR,LF — Memory (DRAM / SRAM / Flash / EEPROM)

Toshiba Semiconductor HN1B04FE-GR,LF

MPNHN1B04FE-GR,LF
End of Life

TRANS NPN/PNP 50V 0.15A ES6

$0.31Ref. price · indicative, final on quote
PackagingSOT-563, SOT-666
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

HN1B04FE-GR,LF Technical Specifications
ParameterValue
Mounting typeSurface Mount
FET typeNPN, PNP
Voltage - collector emitter breakdown50V
Current - collector (Ic)150mA
Current - collector cutoff100nA (ICBO)
DC current gain (hFE) (Min) @ ic, vce200 @ 2mA, 6V
Power - max100mW
Frequency80MHz
Operating temperature150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
CaseSOT-563, SOT-666
Vce saturation (Max) @ ib, ic250mV @ 10mA, 100mA