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Toshiba Semiconductor and Storage 2SK3700(F) — Discrete Semiconductors

Toshiba Semiconductor and Storage 2SK3700(F)

MPN2SK3700(F)
Active
$2.1158Ref. price · indicative, final on quote
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

2SK3700(F) Technical Specifications
ParameterValue
FET typeN-Channel
Mounting typeThrough Hole
Drain to source voltage900 V
Current - continuous drain (Id) @ 25°C5A (Ta)
Power dissipation150W (Tc)
Operating temperature150°C(TJ)
PackageBulk
TechnologyMOSFET (Metal Oxide)
CaseTO-3P-3, SC-65-3
Vgs(th) (Max) @ id4V @ 1mA
Rds on (Max) @ id, vgs2.5Ohm @ 3A, 10V
Gate charge (Qg) (Max) @ vgs28 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1150 pF @ 25 V