2SK3566(STA4,Q,M)
Toshiba Semiconductor and Storage · π-MOSIV Series
MOSFET N-CH 900V 2.5A TO220SIS
[IN STOCK] In Stock: 464 pcs
MOQ 1 · Tube · RoHS · EIA-481 · DAP/DDP · T/T
Technical specifications
| Parameter / Attribute | Specification / Value |
|---|---|
| Series | π-MOSIV |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 900 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 2.5A (Ta) |
| Power dissipation | 40W (Tc) |
| Operating temperature | 150°C (TJ) |
| Package | Tube |
| Vgs | ±30V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 Full Pack |
| Vgs(th) (Max) @ id | 4V @ 1mA |
| Rds on (Max) @ id, vgs | 6.4Ohm @ 1.5A, 10V |
| Gate charge (Qg) (Max) @ vgs | 12 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 470 pF @ 25 V |
2SK3566(STA4,Q,M)
[ALLOC] verified