Toshiba Semiconductor and Storage 2SK3565(Q,M)
MPN2SK3565(Q,M)
Active
$2.0900Ref. price · indicative, final on quote
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Series | π-MOSIV |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 900 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 5A (Ta) |
| Power dissipation | 45W (Tc) |
| Operating temperature | 150°C (TJ) |
| Package | Bulk |
| Vgs | ±30V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 Full Pack |
| Vgs(th) (Max) @ id | 4V @ 1mA |
| Rds on (Max) @ id, vgs | 2.5Ohm @ 3A, 10V |
| Gate charge (Qg) (Max) @ vgs | 28 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 1150 pF @ 25 V |