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Toshiba Semiconductor and Storage 2SK1829TE85LF — Discrete Semiconductors

Toshiba Semiconductor and Storage 2SK1829TE85LF

MPN2SK1829TE85LF
Active
$0.3800Ref. price · indicative, final on quote
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

2SK1829TE85LF specifications
ParameterValue
FET typeN-Channel
MountingSurface Mount
Drain to source voltage20 V
Drive voltage (Max rds on, min rds on)2.5V
Current - continuous drain (Id) @ 25°C50mA (Ta)
Power dissipation100mW (Ta)
Operating temperature150°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs10V
TechnologyMOSFET (Metal Oxide)
CaseSC-70, SOT-323
Rds on (Max) @ id, vgs40Ohm @ 10mA, 2.5V
Input capacitance (Ciss) (Max) @ vds5.5 pF @ 3 V