Toshiba Semiconductor and Storage 2SC5819(TE12L,ZF)
MPN2SC5819(TE12L,ZF)
Active
$0.4400Ref. price · indicative, final on quote
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Mounting | Surface Mount |
| FET type | NPN |
| Voltage - collector emitter breakdown | 20 V |
| Current - collector (Ic) | 1.5 A |
| Current - collector cutoff | 100nA (ICBO) |
| DC current gain (hFE) (Min) @ ic, vce | 400 @ 150mA, 2V |
| Power - max | 1 W |
| Operating temperature | 150°C (TJ) |
| Package | Box |
| Case | TO-243AA |
| Vce saturation (Max) @ ib, ic | 120mV @ 10mA, 500mA |