Skip to main content
Toshiba Semiconductor and Storage 2SC5200-O(S1,F — Discrete Semiconductors

Toshiba Semiconductor and Storage 2SC5200-O(S1,F

MPN2SC5200-O(S1,F
Active
$3.1000Ref. price · indicative, final on quote
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

2SC5200-O(S1,F specifications
ParameterValue
MountingThrough Hole
FET typeNPN
Voltage - collector emitter breakdown230 V
Current - collector (Ic)15 A
Current - collector cutoff5µA (ICBO)
DC current gain (hFE) (Min) @ ic, vce55 @ 1A, 5V
Power - max150 W
Frequency30MHz
Operating temperature150°C(TJ)
PackageTube
CaseTO-3PL
Vce saturation (Max) @ ib, ic3V @ 800mA, 8A