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Toshiba Semiconductor and Storage 2SC5171(LBS2MATQ,M — Discrete Semiconductors

Toshiba Semiconductor and Storage 2SC5171(LBS2MATQ,M

MPN2SC5171(LBS2MATQ,M
Obsolete
$1.8100Ref. price · indicative, final on quote
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

2SC5171(LBS2MATQ,M specifications
ParameterValue
MountingThrough Hole
FET typeNPN
Voltage - collector emitter breakdown180 V
Current - collector (Ic)2 A
Current - collector cutoff5µA (ICBO)
DC current gain (hFE) (Min) @ ic, vce100 @ 100mA, 5V
Power - max2 W
Frequency200MHz
Operating temperature150°C (TJ)
PackageBulk
CaseTO-220-3 Full Pack
Vce saturation (Max) @ ib, ic1V @ 100mA, 1A