Toshiba Semiconductor and Storage 2SC4793,F(J
MPN2SC4793,F(J
Obsolete
$0.8888Ref. price · indicative, final on quote
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Mounting | Through Hole |
| FET type | NPN |
| Voltage - collector emitter breakdown | 230 V |
| Current - collector (Ic) | 1 A |
| Current - collector cutoff | 1µA (ICBO) |
| DC current gain (hFE) (Min) @ ic, vce | 100 @ 100mA, 5V |
| Power - max | 2 W |
| Frequency | 100MHz |
| Operating temperature | 150°C(TJ) |
| Package | Bulk |
| Case | TO-220-3 Full Pack |
| Vce saturation (Max) @ ib, ic | 1.5V @ 50mA, 500mA |