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Toshiba Semiconductor and Storage 2SC4793(F,M) — Discrete Semiconductors

Toshiba Semiconductor and Storage 2SC4793(F,M)

MPN2SC4793(F,M)
Obsolete
$0.3900Ref. price · indicative, final on quote
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

2SC4793(F,M) specifications
ParameterValue
MountingThrough Hole
FET typeNPN
Voltage - collector emitter breakdown230 V
Current - collector (Ic)1 A
Current - collector cutoff1µA (ICBO)
DC current gain (hFE) (Min) @ ic, vce100 @ 100mA, 5V
Power - max2 W
Frequency100MHz
Operating temperature150°C(TJ)
PackageTube
CaseTO-220-3 Full Pack
Vce saturation (Max) @ ib, ic1.5V @ 50mA, 500mA